FGA25N120ANTDTU IGBT Transistor TO-3P 1200V 50A 312W
$10.00
ON Semiconductor, IGBT Transistor, Si, TO-3P-3, Through Hole, VCEO: 1200V, Collector-Emitter Saturation Voltage: 2V, Max Gate Emitter Voltage: 20V
Continuous Collector Current at 25°C: 50A, Pd: 312W, – 55°C ~ +150°C
4 in stock
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