BD139-10 Transistor BCE NPN 80V 1.5A 65hFE 1.25W SOT-32 Through Hole

STMicroelectronics, Transistor BCE NPN 80V 1.5A 65hFE 1.25W SOT-32 Through Hole

VCEO Max: 80V, VCBO: 80V, VEBO: 5V, Collector-Emitter Saturation Voltage: 500mV, Maximum DC Collector Current: 1.5A, Pd – Power Dissipation: 1.25W,

Maximum Operating Temperature: +150°C, DC Collector/Base Gain hfe Min: 63