IGW50N65H5FKSA1 Transistor IGBT 650V 80A 20Vge 305W TO-247
$14.50
Infineon, IGBT Transistor
Collector- Emitter Voltage VCEO Max:650V
Collector-Emitter Saturation Voltage: 1.65V
Maximum Gate Emitter Voltage: 20V
Continuous Collector Current at 25 C: 80A
Pd – Power Dissipation: 305W
Replacement for: GW39NC60VD obsolete Sub’d > IRG4PSC71UPBF obsolete Sub’d > IGW50N65H5FKSA1 (This one)
Also see STGW39NC60VD (New re-production from ST)
Out of stock
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