IGW50N65H5FKSA1 Transistor IGBT 650V 80A 20Vge 305W TO-247

Infineon, IGBT Transistor

Collector- Emitter Voltage VCEO Max:650V

Collector-Emitter Saturation Voltage: 1.65V

Maximum Gate Emitter Voltage: 20V

Continuous Collector Current at 25 C: 80A

Pd – Power Dissipation: 305W

Replacement for: GW39NC60VD obsolete Sub’d > IRG4PSC71UPBF obsolete Sub’d > IGW50N65H5FKSA1 (This one)

Also see STGW39NC60VD (New re-production from ST)