IRF640PBF N-Channel MOSFET 200V 18A 18A 180m±Ω 125W TO-220AB

Vishay Siliconix, N-Channel MOSFET 200V 18A 18A 180m±Ω 125W TO-220AB

Vdss: 200V, Id @ 25°C: 18A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V, Power Dissipation (Max): 125W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), TO-220AB