MJ21194/MJ21194G Transistor NPN 250V 16A 4MHz 8hFE 250W TO-3

ON Semiconductor, Bipolar Transistor – BJT, Through Hole, TO-204-2, NPN

Collector- Emitter Voltage VCEO Max: 250 V

Collector- Base Voltage VCBO: 400 V

Emitter- Base Voltage VEBO: 5 V

Collector-Emitter Saturation Voltage: 1.4 V

Maximum DC Collector Current: 16 A

Gain Bandwidth Product fT: 4 MHz

Minimum Operating Temperature: – 65 C

Maximum Operating Temperature: + 150 C