STGW39NC60VD Transistor IGBT 650V 80A 20Vge 250W TO-247

STMicroelectronics, IGBT Transistor

Collector Emitter Breakdown (Max): 600V

Collector (Ic) (Max): 80A

Collector Pulsed (Icm): 220A

Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A

Power – Max: 250W

Switching Energy: 333µJ (on), 537µJ (off)

Input Type: Standard

Gate Charge: 126nC

Td (on/off) @ 25°C: 33ns/178ns

Test Condition: 390V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr): 45ns

Operating Temperature: -55°C ~ 150°C (TJ)

Possible Replacement for: GW39NC60VD obsolete Sub’d > IRG4PSC71UPBF obsolete Sub’d > IGW50N65H5FKSA1

This one > STGW39NC60VD (New re-production from STMicroelectronics)